Atomic Layer Deposition Of Films Comprising Silicon, Carbon And Nitrogen Using Halogenated Silicon Precursors

ABSTRACT

Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to U.S. Provisional Application No.61/907,717, filed Nov. 22, 2013.

TECHNICAL FIELD

The present invention relates generally to methods of depositing thinfilms. In particular, the invention relates to atomic layer depositionprocesses for the deposition films comprising silicon, carbon andnitrogen.

BACKGROUND

Deposition of thin films on a substrate surface is an important processin a variety of industries including semiconductor processing, diffusionbarrier coatings and dielectrics for magnetic read/write heads. In thesemiconductor industry, in particular, miniaturization requires atomiclevel control of thin film deposition to produce conformal coatings onhigh aspect structures. One method for deposition of thin films withcontrol and conformal deposition is atomic layer deposition (ALD), whichemploys sequential, surface reactions to form layers of precisethickness. Most ALD processes are based on binary reaction sequenceswhich deposit a binary compound film. Because the surface reactions aresequential, the two gas phase reactants are not in contact, and possiblegas phase reactions that may form and deposit particles are limited.

ALD has been used to deposit metals and metal compounds on substratesurfaces. Al₂O₃ deposition is an example of a typical ALD processillustrating the sequential and self-limiting reactions characteristicof ALD. Al₂O₃ ALD conventionally uses trimethylaluminum (TMA, oftenreferred to as reaction “A” or the “A” precursor) and H₂O (oftenreferred to as the “B” reaction or the “B” precursor). In step A of thebinary reaction, hydroxyl surface species react with vapor phase TMA toproduce surface-bound AlOAl(CH₃)₂ and CH₄ in the gas phase. Thisreaction is self-limited by the number of reactive sites on the surface.In step B of the binary reaction, AlCH₃ of the surface-bound compoundreacts with vapor phase H₂O to produce AlOH bound to the surface and CH₄in the gas phase. This reaction is self-limited by the finite number ofavailable reactive sites on surface-bound AlOAl(CH₃)₂. Subsequent cyclesof A and B, purging gas phase reaction products and unreacted vaporphase precursors between reactions and between reaction cycles, producesAl₂O₃ growth in an essentially linear fashion to obtain thepredetermined film thickness. Because of the usefulness of ALDprocesses, there is an ongoing need for new ALD chemistries.

Silicon nitride is a commonly used dielectric throughout thesemiconductor industry. However, there is an increasing need fordielectrics with lower dielectric constant (k) values and with loweretch rates. Thus, there is a need for ALD chemistries of improveddielectrics.

SUMMARY

One aspect of the invention pertains to a method of depositing a filmcomprising Si, C and N. In one or more embodiments, the method comprisesexposing a substrate surface to a silicon precursor, wherein the siliconprecursor is halogenated with Cl, Br or I, and the silicon precursorcomprises a halogenated silane, a halogenated carbosilane, anhalogenated aminosilane or a halogenated carbo-sillyl amine. The methodmay also comprise exposing the substrate to a nitrogen-containingplasma, with the proviso that if the halogenated silicon precursorcomprises the halogenated aminosilane or the halogenated silane, thenthe nitrogen-containing plasma also contains carbon.

Another aspect of the invention pertains to a method of depositing afilm comprising Si, C and N. In one or more embodiments, the methodcomprises exposing a substrate surface to a silicon precursor, whereinthe silicon precursor is halogenated with Cl, Br or I, and the siliconprecursor comprises a halogenated silane, a halogenated carbosilane, anhalogenated aminosilane or a halogenated carbo-sillyl amine. The methodmay further comprise exposing the substrate surface to a nitrogenprecursor to provide a film. The method may further comprise exposingthe film to a densification plasma, with the proviso that if thehalogenated silicon precursor comprises the halogenated aminosilane orthe halogenated silane, then the nitrogen precursor also containscarbon.

A third aspect of the invention pertains to a method of depositing afilm comprising Si, C and N, the method comprising exposing a substratesurface to a silicon precursor, wherein the silicon precursor ishalogenated with Cl, Br or I, and the silicon precursor comprises ahalogenated bis(silyl) methane-based precursor, a halogenatedcyclotrisilazane-based precursor or a halogenatedtrisilacyclohexane-based precursor. The method may further compriseexposing the substrate to a nitrogen-containing plasma or a nitrogenprecursor.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention can be understood in detail, a more particular description ofthe invention, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 shows a transmission electron microscope image of a filmdeposited according to one or more embodiments of the invention over asubstrate with features;

FIGS. 2A-B show a transmission electron microscope image of a filmdeposited according to one or more embodiments of the invention over asubstrate with features and a flat substrate, respectively;

FIGS. 3A-B shows the FTIR spectra of two films deposited in accordancewith one or more embodiments of the invention; and

FIGS. 4A-B show the breakdown voltage and dielectric constant k for twofilms deposited in accordance with one or more embodiments of theinvention.

DETAILED DESCRIPTION

Before describing several exemplary embodiments of the invention, it isto be understood that the invention is not limited to the details ofconstruction or process steps set forth in the following description.The invention is capable of other embodiments and of being practiced orbeing carried out in various ways. It is also to be understood that thecomplexes and ligands of the present invention may be illustrated hereinusing structural formulas which have a particular stereochemistry. Theseillustrations are intended as examples only and are not to be construedas limiting the disclosed structure to any particular stereochemistry.Rather, the illustrated structures are intended to encompass all suchcomplexes and ligands having the indicated chemical formula.

It has been discovered that SiCN films can be deposited using certainsilicon precursors which comprise certain halogenated siliconprecursors. Deposition may also include nitrogen-containing plasmas, ornitrogen precursors and densification plasmas. The resulting SiCN filmscan exhibit better dielectric constants than the more conventional SiNfilms. Specifically, the carbon content can lower the dielectricconstant, which in turn lowers leakage at a transistor level.Furthermore, one or more of the methods described herein allow forvariation of the precursors and/or plasmas to control the specificbonding in the SiCN films, allowing one to have control over theproperties of the film when a film is chosen for a given application oruse.

Conformal coverage with low pattern loading effect of dielectric filmson high aspect ratio structures are of critical requirement as devicenodes shrink down to below 45 nm. Silicon carbon nitride (SiCN) filmsare good candidates for spacer and etch-stop layer applications due toits lower dielectric constant (k). A lower dielectric constant improvesRC capacitor delay, and therefore device performance. Moreover, carbonaddition results in a film with more resistance to hydrofluoric acid inperoxide (HF) and buffer oxide etch (BOE) wet clean. Therefore, thinnerfilm is chosen to have same barrier effect for the spacer, which is acritical requirement as devices move to smaller nodes.

Accordingly, a first aspect of the invention pertains to a method ofdepositing a film comprising Si, C and N (i.e., comprising an SiCNfilm). In one or more embodiments, the method comprises exposing asubstrate surface to a silicon precursor, wherein the silicon precursoris halogenated with Cl, Br or I, and the silicon precursor comprises ahalogenated silane, a halogenated carbosilane, an halogenatedaminosilane or a halogenated carbo-sillyl amine. In some embodiments,the method also comprises exposing the substrate to anitrogen-containing plasma. In other embodiments, the method alsocomprises exposing the substrate surface to a nitrogen precursor toprovide a film, and exposing the film to a densification plasma. Inembodiments where the halogenated silicon precursor comprises thehalogenated aminosilane or the halogenated silane, then thenitrogen-containing plasma also contains carbon.

Therefore, in several embodiments, film deposition can proceed in two orthree steps. In one or more embodiments, the method may comprise siliconprecursor exposure followed by a nitrogen-containing plasma. In otherembodiments, the method may comprise silicon precursor exposure followedby a nitrogen precursor exposure for a thermal ALD reaction, thenfollowed by a plasma treatment for film densification.

A “substrate” as used herein, refers to any substrate or materialsurface formed on a substrate upon which film processing is performedduring a fabrication process. For example, a substrate surface on whichprocessing can be performed include materials such as silicon, siliconoxide, strained silicon, silicon on insulator (SOI), carbon dopedsilicon oxides, silicon nitride, doped silicon, germanium, galliumarsenide, glass, sapphire, and any other materials such as metals, metalnitrides, metal alloys, and other conductive materials, depending on theapplication. Substrates include, without limitation, semiconductorwafers. Substrates may be exposed to a pretreatment process to polish,etch, reduce, oxidize, hydroxylate, anneal and/or bake the substratesurface. In addition to film processing directly on the surface of thesubstrate itself, in the present invention, any of the film processingsteps disclosed may also be performed on an underlayer formed on thesubstrate as disclosed in more detail below, and the term “substratesurface” is intended to include such underlayer as the contextindicates. Thus for example, where a film/layer or partial film/layerhas been deposited onto a substrate surface, the exposed surface of thenewly deposited film/layer becomes the substrate surface.

Silicon Precursors

As discussed above, the silicon precursors comprise a halogenatedsilane, a halogenated carbosilane, an halogenated aminosilane or ahalogenated carbo-sillyl amine. That is, the silicon precursors compriseat least silicon, and then a combination of carbon and/or nitrogen. Inembodiments where the silicon precursor does not contain either nitrogenand/or carbon, then another plasma or precursor may provide a source ofthe nitrogen and/or carbon in order to result in a SiCN film.

In one or more embodiments, the silicon precursors of the instantinvention allowed for highly tailored film compositions that areconformal and contain a chosen film composition and bond configurations.In contrast, previously used silicon precursors do not allow for suchtailored films.

Carbon atoms in previously used precursors bond to silicon atoms asterminal C_(x)H_(y) after reacting with N-precursors, such as ammonia(NH₃) or nitrogen gas (N₂). Under stress of thermal cycling, such asfront-end-of-line (FEOL) processing anneal (which may reach temperaturesas high as 1050° C.), C_(x)H_(y) will dissociate and reform as a moreconductive Si—C—Si network. As a result, the dielectric propertiesdegrade after thermal anneal.

Different types of bonding may be chosen for certain applications, anddependent on the types of processing that will occur after the film isdeposited. For example, bonds of Si to either —N or —CN groups, ratherthan to H or —CH—, generally result in more stable films with thermalanneal. Other stable bonds that have good stability are variations ofSi—C_(x)N_(y), where x+y=4 such as N₃—Si—CN, or C₃—Si—CN or N₂—Si—C—CN.To improve the breakdown voltage further, the relative amount of Si—Nbonds may be increased. In some embodiments, stable SiN bonds in thismanner are Si—NH—CN or Si₂-N—CN. In one or more embodiments, CN isbonded to Si. With one or more of the precursors of the instantapplication, these —N and —CN bonds can either be pre-formed in the Siprecursors or may form from the reaction of N-precursors such as NH₃ orN₂. To preserve the as-deposited high breakdown voltage similar tosilicon nitride, the films may have Si bonded to N atoms. However, sincefilms with more SiN and CN bonds can have higher HF-clean etch rate, asmall percentage of SiC network may still be used to meet etch raterequirements. To lower the etch rate, the C content of the film may beincreased while maintaining the thermal stability achieved with Si—CNbonds. In sum, CN is generally more thermally stable than SiCH₃, SiH orCH bonds, suitable for providing low k dielectric properties. SiCbonding can confer HF resistance, and SiN for good dielectric strength.The particular parameters of a given application can thus be met byvarying and balancing the type and prevalence of bonding in the film.

In one or more embodiments, the precursor contains direct Si—C bonds orSi—C—Si bonds to incorporate carbon and therefore lower the etch rate ofthe deposited film, as well as Si—Cl bonds used for self-saturatingbehavior and sufficient reactivity with nitridation sources (NH₃, NH₃plasma, N₂ plasma . . . etc) during atomic layer deposition.

In embodiments incorporating Si—CH₂—CN or Si—CN moieties into the film,the starting silicon precursors may comprise —CN (nitrile) groups and/or—HCNR (imido) groups. In the absence of —CN groups in the film, thisbond may be formed during the deposition. In one or more embodiments,this bond is formed by using a nitrogen-containing plasma and acarbon-containing silicon precursor. In alternative embodiments, thesebonds may be formed by using a silicon precursor either with carbon(e.g., bis(trichlorosilyl)methane (BTCSM), methane dichlorosilane(MDCS)) or without carbon (i.e., DCS) and a nitrogen-containing plasmaoptionally containing carbon if the silicon precursor does not containcarbon (such as alkyl amine) in the presence or absence of NH₃. Theseprocesses therefore allow for control the carbon content. Because thevarious types of bonding can be controlled in the resulting films, oneof more of the SiCN films described herein are suitable for spacer andetch-stop layer applications.

In one or more embodiments, the silicon precursor contains between oneand four halogen atoms per silicon atom. These halogen-terminated bondscan provide the self-limiting reaction behavior associated with ALD.Thus, for example, the hydrogen atoms in silane (SiH₄) may be replaced1, 2, 3 or 4 times with a halogen (e.g., chlorine) to producemonochlorosilane, dichlorosilane (DCS), trichlorosilane or silicontetrachloride. The halogen may be selected from the group consisting ofCl, Br and I, and in further embodiments, Cl. In some embodiments wherethe silicon precursor also contains carbon, bromine is used as thehalogen. In one or more embodiments, the silicon precursor features atleast one H—N bond, which can increase reactivity of the molecule.

In some embodiments, the silicon precursor does not contain carbon. Inembodiments where the silicon precursor does not contain carbon, someother carbon source may be provided. For example, if a plasma is used,the plasma may be a carbon source. In some embodiments, a plasma may bedual function (e.g, be a densification plasma as well as providing acarbon source for the film). In alternative embodiments, the siliconprecursor does contain carbon. In such embodiments, other componentsused in making the film (i.e., other precursor or film) may or may notalso contain carbon. Using other precursors or films that also containcarbon may help in increasing the overall carbon content of the film.

In some embodiments, the silicon precursor is silane-based, such ashalogenated silane (SiH₄), disilane (Si₂H₆), trisilane (Si₃H₈), etc. Thesilane-based silicon precursors may features one or more, and up to all,of the hydrogen atoms replaced with halogen atoms. Examples of suitableprecursors therefore comprise monochlorosilane, dichlorosilane,trichlorosilane, or silicon tetrachloride, hexalorodisilane (HCDS).

In one or more embodiments, the silicon precursor comprises ahalogenated carbosilane. Suitable halogenated carbosilanes include, butare not limited to, those based on 1,4-disilabutane, 1,3-disilabutane,1,3,5-trisilapentane, 1,3-disilacyclobutane and1,3,5-trisilacyclohexane, etc.

In some embodiments, the silicon precursor has a formula(X_(y)H_(3-y)Si)_(z)CH_(4-z), wherein X is a halogen, y has a value ofbetween 1 and 3, and z has a value of between 1 and 3. In one or moreembodiments, each X is independently selected from Cl, Br and I. Infurther embodiments, embodiments at least one of the X groups is Cl. Ineven further embodiments, all X groups are Cl. Such a compound is knownas bis(trichlorosilyl)methane (BTCSM), hexachlorodisilylmethylene(HCDSM), 1,1′-methylenebis(1,1,1-trichlorosilane), ormethylenebis(trichlorosilane), and has a structure represented by:

Other examples of suitable precursors include, but are not limited tothose having a structure represented by:

BTCSM may be utilized as a source of Si and C atoms source. In BTCSMmolecules, the methylene group (—CH₂—) is sandwiched between two —SiCl₃groups. While not wishing to be bound to any particular theory, it isthought that when reacting molecules such as BTCSM with a nitrogensource (e.g., NH₃ and/or N₂), one portion of the molecule will form SiN,while the other half will form SiCN. Both types of bonding can beadvantageous for high breakdown voltage and good thermal stability. Thereaction is thought to be self-limiting because of thehalogen-terminated bonds, which allows for excellent step coverage.

In one or more embodiments, the silicon precursor comprises ahalogenated bis(silyl) methane precursor. In further embodiments, thehalogenated bis(silyl) methane-based precursor has a structurerepresented by formula (I):

-   -   wherein        -   each R, R₁, R₂, R₃ and R₄ is independently H, Cl or            (CH₂)_(n)CH_(y)NA_(y);        -   n=0-6;        -   y=0-1;        -   A=C₁₋₆ linear, branched or cyclic alkyl or aryl group or            hydrogen.            Examples of suitable A substituents include, but are not            limited to, methyl, ethyl, propyl, cyclohexyl or phenyl. In            one or more embodiments, at least one of R, R₁, R₂, R₃, or            R₄ is (CH₂)_(n)CH_(y)NA_(y). In further embodiments at least            one of R, R₁, R₂, R₃, or R₄ is Cl. In some embodiments, n is            a non-negative integer. In some embodiments, y is 1. In            other embodiments, n and/or y are zero. In one or more            embodiments, the R groups can be functionalized with a            variety of groups (alkyls, nitriles, imidos, halides) to            increase C, N and CN content in the film, as well as to            increase halogen content for reactivity enhancement in the            precursor.

In further embodiments, the halogenated bis(silyl) methane-basedprecursor is selected from the group consisting of:

In other embodiments, the silicon precursor comprises acyclotrisilazane-based precursor. Cyclotrisilazanes contain R groupsthat can be functionalized with alkyls, nitriles, and imidos for tuningof the resulting films properties. In addition, there are three Si—N—Sior Si—C—Si fragments which should result in longer chains of Si—C—Si orSi—N—Si within the deposited film. In further embodiments, thecyclotrisilazane-based precursor has a structure represented by:

-   -   wherein        -   each R is independently is H or (CH₂)_(n)CH_(y)NA_(y);        -   each R₁, and R₂ are independently H, Br, Cl, I or            (CH₂)_(n)CH_(y)NA_(y), with the proviso that at least one R₁            or R₂ is Br, Cl or I;        -   n=0-6;        -   y=0-1;        -   A=C₁₋₆ linear, branched or cyclic alkyl or aryl group or            hydrogen.

Examples of suitable A substituents include, but are not limited to,methyl, ethyl, propyl, cyclohexyl or phenyl. In one or more embodiments,at least one of R, R₁ and R₂, is (CH₂)—CH_(y)NA_(y). In furtherembodiments, at least one of R, R₁ and R₂, is a halogen, particularlychlorine.

In further embodiments, the cyclotrisilazane-based precursor is selectedfrom the group consisting of:

Trisilacyclohexanes also contain R groups that can be functionalizedwith alkyls, nitriles, and imidos for tuning of the resulting filmsproperties. In addition, there are three Si—N—Si or Si—C—Si fragments,which are thought to result in longer chains of Si—C—Si or Si—N—Siwithin the deposited film. In some embodiments, the silicon precursorcomprises a trisilacyclohexane-based precursor. In further embodiments,the trisilacyclohexane-based precursor has a structure represented by:

-   -   wherein        -   each R, R₁, R₂, R₃ and R₄ is independently H, Br, Cl, I or            (CH₂)—CH_(y)NA_(y);        -   n=0-6;        -   y=0-1;        -   A=C₁₋₆ linear, branched or cyclic alkyl or aryl group or            hydrogen.

Examples of suitable A substituents include, but are not limited to,methyl, ethyl, propyl, cyclohexyl or phenyl. In one or more embodiments,at least one of R, R₁, R₂, R₃ and R₄ is (CH₂)—CH_(y)NA_(y). In someembodiments, at least one of R, R₁, R₂, R₃ and R₄ is a halogen,particularly chlorine. In further embodiments, thetrisilacyclohexane-based precursor is selected from the group consistingof:

Exposing the Substrate to a Nitrogen-Containing Plasma

In one or more embodiments, the method comprises exposing the substratesurface to a nitrogen-containing plasma. In some embodiments, thenitrogen-containing plasma comprises ammonia, an amine, hydrazine orcarbonitride. As discussed above, the nitrogen-containing plasma may ormay not contain carbon depending on the silicon precursor used, anddepending on whether there are other sources of carbon. In embodimentswhere the silicon precursor does not contain carbon, then thenitrogen-containing plasma may have carbon, so that there is at leastone source of carbon for the SiCN film. Examples of plasmas that containnitrogen and carbon include plasmas comprising alkyl amines, such asmethyl amine, ethyl amine, dimethyl amine, diethyl amine, trimethylamine, triethyl amine, methyl ethyl amine, dimethyl ethyl amine,tert-butyl amine, etc. Where a silicon precursor is used that doescontain carbon, then the nitrogen-containing plasma does not need toalso contain carbon, although it may also contain carbon to increase thecarbon content of the resulting film.

In one or more embodiments, the nitrogen-containing plasma is a mixtureof compounds. Thus, for example, the nitrogen-containing plasma maycomprise N₂, as well as other components. Other components include, butare not limited to ammonia, amines, and carbon-containing components.

In some embodiments, the nitrogen-containing plasma also contains adiluting component. For example, the nitrogen-containing plasma may bediluted with argon, helium or other inert dilution plasma. In one ormore embodiments, the exposure of the substrate surface to a halogenatedsilicon precursor and nitrogen-containing plasma occurs in one chamber.

Exposing the Substrate Surface to a Nitrogen Precursor

In some embodiments, the method comprises exposing the substrate surfaceto a nitrogen precursor to provide a film. In further embodiments, thenitrogen precursor comprises ammonia, alkyl amine or other amine. Insome embodiments, ammonia is utilized for thermal reactions, andnitrogen or nitrogen with ammonia for plasma-based reactions. Asdiscussed above, the nitrogen precursor may or may not contain carbondepending on the silicon precursor used, and whether there are othersources of carbon. In embodiments, where the silicon precursor does notcontain carbon, then the nitrogen precursor may have carbon, so thatthere is at least one source of carbon for the SiCN film. Where asilicon precursor is used that does contain carbon, then the nitrogenprecursor does not need to also contain carbon, although it may alsocontain carbon to increase the carbon content of the resulting film.

In one or more embodiments, the silicon precursor comprises ahalogenated silane and the nitrogen precursor comprises ammonia. In someembodiments, the silicon precursor comprises a halogenated carbosilaneand the nitrogen precursor comprises an alkyl amine.

Exposing the Film Comprising Si and N to a Densification Plasma

In one or more embodiments, the method comprises exposing the filmcomprising Si and N to a densification plasma. Densification plasmasallow for removal of hydrogen. Any densification plasmas known in theart may be utilized, including, but not limited to, hydrogen gas (H₂),nitrogen gas (N₂), etc.

In some embodiments, the exposure of the substrate surface to ahalogenated silicon precursor, nitrogen precursor and densificationplasma occurs in one chamber.

In one or more embodiments, the method further comprises exposing thefilm comprising Si and N to a carbon source. In some embodiments, thecarbon source comprises exposing the film comprising Si and N to acompound with a C═C bond. An exemplary carbon source is propylene. Whenplasma is used for the reaction, other carbon sources can be used aswell: methane, acetylene.

Process Conditions and Equipment

The specific reaction conditions for the ALD reaction will be selectedbased on the properties of the film precursors, plasmas, any otherreagents and substrate surface. The deposition may be carried out atatmospheric pressure, but may also be carried out at reduced pressure.The vapor pressure of the catalyst should be low enough to be practicalin such applications. The substrate temperature should be low enough tokeep the bonds of the substrate surface intact and to prevent thermaldecomposition of gaseous reactants. However, the substrate temperatureshould also be high enough to keep the film precursors in the gaseousphase and to provide sufficient energy for surface reactions. Thespecific temperature depends on the specific substrate, film precursors,and catalyst used and pressure. The properties of the specificsubstrates, precursors, plasmas, and any other reagents may be evaluatedusing methods known in the art, allowing selection of appropriatetemperature and pressure for the reaction. In any event, in one or moreembodiments, the deposition is carried out at a temperature less thanabout 550, 500, 450 400, 350, 300, 250 or 200° C.

In some embodiments, the substrate surface that will be exposed tovarious precursors contains a layer that allows the reaction of eitherthe first or second precursors. Examples include layers that containreactive —OH or —H moieties or handles.

One or more of the methods described above may be an atomic layerdeposition (ALD) process. In such embodiments, the substrate surface isexposed to the precursors sequentially or substantially sequentially. Asused herein throughout the specification, “substantially sequentially”means that a majority of the duration of a precursor exposure does notoverlap with the exposure to a co-reagent, although there may be someoverlap.

One or more of the methods described above may be a chemical vapordeposition (CVD) process. In such embodiments, the substrate surface isexposed to the precursors simultaneously or substantiallysimultaneously. As used herein throughout the specification,“substantially simultaneously” means that the majority of the durationof a precursor exposure overlaps with the exposure to a co-reagent,although they may not be exactly co-extensive.

In one or more embodiments, once a process has been carried out, it maybe repeated to achieve additional layers of film deposition. The processmay be repeated as necessary to achieve predetermined film thicknesses.Additionally, certain parts of the methods described herein may berepeated. For example, in some embodiments relating to a thermal ALD ofSiN process followed by densification plasma, the thermal ALD processmay be repeated several times prior to exposure to the densificationplasma.

In some embodiments, films formed may be laminated to achieve thepredetermined film properties. For example, a film can be deposited byalternating film layers deposited by thermal-only exposures, whichenables good control over the carbon of the film and plasma-assistedatomic layer deposition. It is thought that the film layers deposited byplasma process will contain a higher Si—N network boding which mayresult in superior dielectric breakdown, as well as modify the “thermalALD” layer to increase density and modulate the carbon bonding (i.e.,controlling the ration of Si—CN Si—C—CN for low k and Si—C—Si networkfor low etch rate).

In one or more embodiments, the methods described above may be combinedwith other film deposition processes. That is, in some embodiments, theabove methods may be used to deposit SiCN over or under other films toachieve an overall composition. For example, SiCN deposition may becombined with alternating layers of SiN, SiC, and SiCN deposition bymethods known in the art. In some embodiments, a low-k dielectric,thermally stable film (containing —CN or —C—CN) and having goodelectrical properties (—SiN bonds) and good HF-solution etch resistancecan be achieved by adding carbon to a SiN monolayer. Examples of thisapproach would utilize HCDS or DCS as ALD silicon precursors, andreacting with NH₃/N₂ and a hydrocarbon (e.g., CH₄ or C₂H₂). Inembodiments where the chosen film is for application as a laminatedspacer material, the method may further comprise an ex-situ plasmatreatment to satisfy integration requirements.

According to one or more embodiments, the substrate is subjected toprocessing prior to and/or after forming the layer. This processing canbe performed in the same chamber or in one or more separate processingchambers. In some embodiments, the substrate is moved from the firstchamber to a separate, second chamber for further processing. Thesubstrate can be moved directly from the first chamber to the separateprocessing chamber, or it can be moved from the first chamber to one ormore transfer chambers, and then moved to the separate processingchamber. Accordingly, the processing apparatus may comprise multiplechambers in communication with a transfer station. An apparatus of thissort may be referred to as a “cluster tool” or “clustered system,” andthe like.

Generally, a cluster tool is a modular system comprising multiplechambers which perform various functions including substratecenter-finding and orientation, degassing, annealing, deposition and/oretching. According to one or more embodiments, a cluster tool includesat least a first chamber and a central transfer chamber. The centraltransfer chamber may house a robot that can shuttle substrates betweenand among processing chambers and load lock chambers. The transferchamber is typically maintained at a vacuum condition and provides anintermediate stage for shuttling substrates from one chamber to anotherand/or to a load lock chamber positioned at a front end of the clustertool. Two well-known cluster tools which may be adapted for the presentinvention are the Centura® and the Endura®, both available from AppliedMaterials, Inc., of Santa Clara, Calif. The details of one suchstaged-vacuum substrate processing apparatus is disclosed in U.S. Pat.No. 5,186,718, entitled “Staged-Vacuum Wafer Processing Apparatus andMethod,” Tepman et al., issued on Feb. 16, 1993. However, the exactarrangement and combination of chambers may be altered for purposes ofperforming specific steps of a process as described herein. Otherprocessing chambers which may be used include, but are not limited to,cyclical layer deposition (CLD), atomic layer deposition (ALD), chemicalvapor deposition (CVD), physical vapor deposition (PVD), etch,pre-clean, chemical clean, thermal treatment such as RTP, plasmanitridation, degas, orientation, hydroxylation and other substrateprocesses. By carrying out processes in a chamber on a cluster tool,surface contamination of the substrate with atmospheric impurities canbe avoided without oxidation prior to depositing a subsequent film.

According to one or more embodiments, the substrate is continuouslyunder vacuum or “load lock” conditions, and is not exposed to ambientair when being moved from one chamber to the next. The transfer chambersare thus under vacuum and are “pumped down” under vacuum pressure. Inertgases may be present in the processing chambers or the transferchambers. In some embodiments, an inert gas is used as a purge gas toremove some or all of the reactants. According to one or moreembodiments, a purge gas is injected at the exit of the depositionchamber to prevent reactants from moving from the deposition chamber tothe transfer chamber and/or additional processing chamber. Thus, theflow of inert gas forms a curtain at the exit of the chamber.

The substrate can be processed in single substrate deposition chambers,where a single substrate is loaded, processed and unloaded beforeanother substrate is processed. The substrate can also be processed in acontinuous manner, similar to a conveyer system, in which multiplesubstrate are individually loaded into a first part of the chamber, movethrough the chamber and are unloaded from a second part of the chamber.The shape of the chamber and associated conveyer system can form astraight path or curved path. Additionally, the processing chamber maybe a carousel in which multiple substrates are moved about a centralaxis and are exposed to deposition, etch, annealing, cleaning, etc.processes throughout the carousel path.

During processing, the substrate can be heated or cooled. Such heatingor cooling can be accomplished by any suitable means including, but notlimited to, changing the temperature of the substrate support andflowing heated or cooled gases to the substrate surface. In someembodiments, the substrate support includes a heater/cooler which can becontrolled to change the substrate temperature conductively. In one ormore embodiments, the gases (either reactive gases or inert gases) beingemployed are heated or cooled to locally change the substratetemperature. In some embodiments, a heater/cooler is positioned withinthe chamber adjacent the substrate surface to convectively change thesubstrate temperature.

The substrate can also be stationary or rotated during processing. Arotating substrate can be rotated continuously or in discreet steps. Forexample, a substrate may be rotated throughout the entire process, orthe substrate can be rotated by a small amount between exposures todifferent reactive or purge gases. Rotating the substrate duringprocessing (either continuously or in steps) may help produce a moreuniform deposition or etch by minimizing the effect of, for example,local variability in gas flow geometries.

In atomic layer deposition type chambers, the substrate can be exposedto the first and second precursors either spatially or temporallyseparated processes. Temporal ALD is a traditional process in which thefirst precursor flows into the chamber to react with the surface. Thefirst precursor is purged from the chamber before flowing the secondprecursor. In spatial ALD, both the first and second precursors aresimultaneously flowed to the chamber but are separated spatially so thatthere is a region between the flows that prevents mixing of theprecursors. In spatial ALD, the substrate is moved relative to the gasdistribution plate, or vice-versa.

In embodiments, where one or more of the parts of the methods takesplace in one chamber, the process may be a spatial ALD process. Althoughone or more of the chemistries described above may not be compatible(i.e., result in reaction other than on the substrate surface and/ordeposit on the chamber), spatial separation ensures that the reagentsare not exposed to each in the gas phase. For example, temporal ALDinvolves the purging the deposition chamber. However, in practice it issometimes not possible to purge all of the excess reagent out of thechamber before flowing in additional regent. Therefore, any leftoverreagent in the chamber may react. With spatial separation, excessreagent does not need to be purged, and cross-contamination is limited.Furthermore, a lot of time can be required to purge a chamber, andtherefore throughput can be increased by eliminating the purge step.

Reference throughout this specification to “one embodiment,” “certainembodiments,” “one or more embodiments” or “an embodiment” means that aparticular feature, structure, material, or characteristic described inconnection with the embodiment is included in at least one embodiment ofthe invention. Thus, the appearances of the phrases such as “in one ormore embodiments,” “in certain embodiments,” “in one embodiment” or “inan embodiment” in various places throughout this specification are notnecessarily referring to the same embodiment of the invention.Furthermore, the particular features, structures, materials, orcharacteristics may be combined in any suitable manner in one or moreembodiments.

Although the invention herein has been described with reference toparticular embodiments, it is to be understood that these embodimentsare merely illustrative of the principles and applications of thepresent invention. It will be apparent to those skilled in the art thatvarious modifications and variations can be made to the method andapparatus of the present invention without departing from the spirit andscope of the invention. Thus, it is intended that the present inventioninclude modifications and variations that are within the scope of theappended claims and their equivalents.

EXAMPLES Example 1 Film Deposition Over Spacer

A film comprising SiCN was deposited using BTCSM, NH₃, N₂, H₂ and Arcarrier. The substrate was exposed to alternating doses of the reagents(i.e., in an atomic layer deposition process). Film deposition tookplace at a substrate temperature of 480° C. with a chamber pressure of50 Torr. The film was deposited onto a poly-silicon structure with dense5:1 aspect ratio (AR) substrate.

FIG. 1 shows a transmission electron microscope (TEM) photograph of thedeposited film. The figure demonstrates the high conformality of thenitride spacer as deposited on the substrate. Since the films aredeposited in ALD-mode, both films have excellent step coverage and lowpattern loading (PLE) defined as thickness difference between densestructure and open areas. The resulting side to top coverage was 97%.

Example 2 Film Deposition Over Spacer and Blanket Deposition

A film comprising SiCN was deposited using BTCSM, N₂, H₂, NH₃ with Arplasma source. The substrate was exposed to alternate exposures of thereagents (i.e., in an atomic layer deposition process). Film depositiontook place at a substrate temperature of 400° C. with a chamber pressureof 5 Torr. The film was deposited onto a poly-silicon structure withdense 5:1 aspect ratio (AR) substrate, as well as onto a bare siliconsubstrate

FIGS. 2A and 2B show TEM pictures of the deposited film. The photographsshow the conformality of the nitride spacer deposited by on thepoly-silicon structures in dense 5:1 AR as well as on open bare siliconsubstrate. The resulting side to top step coverage is 95% and PLE=5%.

Example 3 FTIR Analysis

The Fourier Transform Infrared (FTIR) spectra for the films in Examples1 and 2 are shown in FIGS. 3A-B, respectively. As seen in the figure,the films have no or minimal terminal —CH_(x) bonds as-deposited, whichis indicated by the absence of a peak at 2900 cm⁻¹. The —CN bonds arepresent in the film, as indicated by the pronounced peak at 2200 cm⁻¹.With different reaction conditions, the films have differentcompositions as indicated in the FTIR.

Example 4 Breakdown Voltage and Dielectric Constant

The breakdown voltage and dielectric constant of the film of Examples 1and 2 were measured. The film was subjected to a rapid thermalprocessing (RTP) process (1050° C. spike anneal in N₂). The results areshown in FIGS. 4A and B, respectively. Because of the presence of —CNbonds, the breakdown voltage plus dielectric constant are stablepost-RTP. The dielectric constants for the SiCN films which are as lowas 5.1 are lower than typical values of 6.5 to 7.0 for SiN.

What is claimed is:
 1. A method of depositing a film comprising Si, Cand N, the method comprising: a. exposing a substrate surface to asilicon precursor, wherein the silicon precursor is halogenated with Cl,Br or I, and the silicon precursor comprises a halogenated silane, ahalogenated carbosilane, an halogenated aminosilane or a halogenatedcarbo-sillyl amine; and b. exposing the substrate to anitrogen-containing plasma, with the proviso that if the halogenatedsilicon precursor comprises the halogenated aminosilane or thehalogenated silane, then the nitrogen-containing plasma also comprisescarbon.
 2. The method of claim 1, wherein the silicon precursorcomprises a halogenated bis(silyl) methane-based precursor.
 3. Themethod of claim 2, wherein the halogenated bis(silyl) methane-basedprecursor has a structure represented by:

wherein each R, R₁, R₂, R₃ and R₄ is independently H, Cl or(CH₂)_(n)CH_(y)NA_(y), n=0-6, y=0-1, A=C₁₋₆ linear, branched or cyclicalkyl or aryl group or hydrogen.
 4. The method of claim 1, wherein thesilicon precursor comprises a halogenated cyclotrisilazane-basedprecursor.
 5. The method of claim 4, wherein the halogenatedcyclotrisilazane-based precursor has a structure represented by:

wherein each R is independently is H or (CH₂)_(n)CH_(y)NA_(y); each R₁,and R₂ are independently H, Br, Cl, I or (CH₂)—CH_(y)NA_(y), with theproviso that at least one R₁ or R₂ is Br, Cl or I; n=0-6; y=0-1; A=C₁₋₆linear, branched or cyclic alkyl or aryl group or hydrogen.
 6. Themethod of claim 1, wherein the silicon precursor comprises a halogenatedtrisilacyclohexane-based precursor.
 7. The method of claim 6, whereinthe halogenated trisilacyclohexane-based precursor has a structurerepresented by:

wherein each R, R₁, R₂, R₃ and R₄ is independently H, Br, Cl, I or(CH₂)—CH_(y)NA_(y); n=0-6; y=0-1; A=C₁₋₆ linear, branched or cyclicalkyl or aryl group or hydrogen.
 8. The method of claim 1, wherein thenitrogen-containing plasma comprises ammonia, an amine or carbonitride.9. A method of depositing a film comprising Si, C and N, the methodcomprising: a. exposing a substrate surface to a silicon precursor,wherein the silicon precursor is halogenated with Cl, Br or I, and thesilicon precursor comprises a halogenated silane, a halogenatedcarbosilane, an halogenated aminosilane or a halogenated carbo-sillylamine; b. exposing the substrate surface to a nitrogen precursor toprovide a film; and c. exposing the film to a densification plasma, withthe proviso that if the halogenated silicon precursor comprises thehalogenated aminosilane or the halogenated silane, then the nitrogenprecursor also contains carbon.
 10. The method of claim 9, wherein thesilicon precursor comprises a halogenated silane and the nitrogenprecursor comprises ammonia.
 11. The method of claim 9, wherein thesilicon precursor comprises a halogenated carbosilane and the nitrogenprecursor comprises an alkyl amine.
 12. The method of claim 9, whereinthe silicon precursor comprises a halogenated bis(silyl) methaneprecursor.
 13. The method of claim 9, wherein the halogenated bis(silyl)methane-based precursor has a structure represented by:

wherein each R, R₁, R₂, R₃ and R₄ is independently H, Cl or(CH₂)_(n)CH_(y)NA_(y), n=0-6, y=0-1, A=C₁₋₆ linear, branched or cyclicalkyl or aryl group or hydrogen.
 14. The method of claim 9, wherein thesilicon precursor comprises a halogenated cyclotrisilazane-basedprecursor.
 15. The method of claim 14, wherein the halogenatedcyclotrisilazane-based precursor has a structure represented by:

wherein each R is independently H or (CH₂)_(n)CH_(y)NA_(y); each R₁, andR₂ are independently H, Br, Cl, I or (CH₂)_(n)CH_(y)NA_(y), with theproviso that at least one R₁ or R₂ is Br, Cl or I; n=0-6, y=0-1, A=C₁₋₆linear, branched or cyclic alkyl or aryl group or hydrogen.
 16. Themethod of claim 9, wherein the silicon precursor comprises a halogenatedtrisilacyclohexane-based precursor.
 17. The method of claim 16, whereinthe halogenated trisilacyclohexane-based precursor has a structurerepresented by:

wherein each R, R₁, R₂, R₃ and R₄ is independently H, Br, Cl, I or(CH₂)_(n)CH_(y)NA_(y); n=0-6, y=0-1, A=C₁₋₆ linear, branched or cyclicalkyl or aryl group or hydrogen.
 18. The method of claim 17, furthercomprising exposing the film comprising Si and N to a carbon source. 19.The method of claim 18, wherein the carbon source comprises exposing thefilm to a compound with a C═C bond.
 20. A method of depositing a filmcomprising Si, C and N, the method comprising a. exposing a substratesurface to a silicon precursor, wherein the silicon precursor ishalogenated with Cl, Br or I, and the silicon precursor comprises ahalogenated bis(silyl) methane-based precursor, a halogenatedcyclotrisilazane-based precursor or a halogenatedtrisilacyclohexane-based precursor; and b. exposing the substrate to anitrogen-containing plasma or a nitrogen precursor.